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Category: BEAM

New semiconductor device physics in polymer diodes and transistors

J.H. Burroughes, C.A. Jones & R.H. Friend
Nature 1988, 335, 137
and following papers:
All-Polymer Field-Effect Transistor Realized by Printing Techniques
F. Garnier, R. Hajlaoui, A. Yassar, P. Srivastava
Science 1994, 265, 1684
Logic Gates Made from Polymer Transistors and Their Use in Ring Oscillators
A.R. Brown, A. Pomp, C.M. Hart, D.M. de Leeuw
Scinece 1995, 270, 972
and Dodabalapur group’s publication

Author zhuangPosted on March 3, 2008Categories BEAM, optoElectronicsLeave a comment on New semiconductor device physics in polymer diodes and transistors

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