Abstract

Amorphous hydrogenated silicon (a-Si:H)-based semiconductors dominate many application areas, such as flat-panel liquid crystal displays, high electrophotography, and photovoltaics. The uniqueness of amorphous silicon from a basic physics point of view is discussed with respect to its crystalline counterpart. The growth mechanism of a-Si:H using the plasma-enhanced chemical vapor deposition (PECVD) technique and the interrelationship between some deposition parameters and the resulting optoelectronic properties of the film are outlined. This discussion is expanded to the use of these materials in various important applications and the primary companies involved in their manufacture.